The 2001 Laureates / Advanced Technology Category / Electronics

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Izuo Hayashi

Japan / May 1, 1922-2005
Physicist; Member, The Engineering Academy of Japan

"Success in continuous operation of semiconductor lasers at room temperature - a pioneering step in optoelectronics"
Dr. Alferov, Dr. Hayashi and Dr. Panish have made pioneering contributions to the development of optoelectronics as we know it today with the achievement of continuous wave operation of semiconductor lasers at room temperature. They have thus paved the way for commercial use of electronic devices that play an essential role in the building of information infrastructures supporting the worldwide IT revolution.

BRIEF BIOGRAPHY

1922
Born in Tokyo, Japan
1946
M.S., Physics Department, the University of Tokyo
1955
Associate Professor, the Institute for Nuclear Study, the University of Tokyo
1962
Ph.D. in Science, the University of Tokyo
1963
Researcher, MIT
1964-1971
Member of Technical Staff, Bell Telephone Laboratories (now Bell Laboratories)
1971
Fellow, NEC
1982-1987
Head Scientist, Optoelectronics Joint Research Laboratories
1987-1994
Director, Optoelectronics Technology Research Laboratory, Tsukuba
1994-1996
Advisor, the same Laboratory
1996
Retired from the same Laboratory

AWARDS AND HONORS

1946
Fujiwara Prize, Japan
1975
Prize from Institute of Electronics and Communication Engineers, Japan
1976
IEEE Fellow
1984
GaAs Simposium Award
1984
IEEE Electron Device Award (J. J. Ebers)
1986
Asahi Prize, Japan
1986
C&C Prize (with Panish), Japan
1988
IEEE David Sarnoff Award
1993
The Marconi International Award, U. S. A.
2001
Applied Physics Society Prize, Japan

MAJOR WORKS

1968
Effect of Band Shapes on Carrier Distribution at High Temperature. IEEE J. Quantum Electronics QE-4 (4).
1969
A Low Threshold Room-Temperature Injection Laser. IEEE J. Quantum Electron, QE-5 (4). (with M. B. Panish and P. W. Foy)
1970
Double Heterostructure Injection Lasers with Room-Temperature Thresholds as low as 2300 A/cm². Appl. Phys. Lett. 16 (8). (with M. B. Panish and S. Sumski)
1970
Junction Lasers Which Operate Continuously at Room-Temperature. Appl. Phys. Lett. 17 (3). (with M. B. Panish and others)
1971
GaAs-AlGaAs Double Heterostructure Injection Lasers. J. Appl. Phys. 42 (5). (with M. B. Panish and F. K. Reinhart)
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