The 2001 Laureates / Advanced Technology Category / Electronics

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Morton B. Panish

U. S. A / April 8, 1929
Physical Chemist; Member, The U.S. National Academies of Sciences and Engineering

"Success in continuous operation of semiconductor lasers at room temperature - a pioneering step in optoelectronics"
Dr. Alferov, Dr. Hayashi and Dr. Panish have made pioneering contributions to the development of optoelectronics as we know it today with the achievement of continuous wave operation of semiconductor lasers at room temperature. They have thus paved the way for commercial use of electronic devices that play an essential role in the building of information infrastructures supporting the worldwide IT revolution.

BRIEF BIOGRAPHY

1929
Born in New York, U. S. A.
1950
B.S., University of Denver
1954
Ph.D., Physical Chemistry, Michigan State University
1954-1957
Oak Ridge National Laboratory
1957-1964
Member, Technical Staff, RAD division, AVCO Corp.
1964-1969
Member of Technical Staff, Bell Telephone Laboratories (now Bell Laboratories)
1969-1986
Department Head, the same laboratory
1969-1992
Distinguished Member of Technical Staff, the same laboratory
1992
Retired from the same laboratory

AWARDS AND HONORS

1972
Electronics Diversion Award, Electrochemical Society
1976
Fellow, The American Physical Society
1979
Solid State Science Award
1986
C&C Prize (with Hayashi), Japan
1990
International Crystal Growth Award, American Association of Crystal Growth
1990
Fellow, IEEE
1991
Morris N. Liebmann Award, Institute Electric and Electronic Engineers
1994
John Bardeen Award, The Minerals, Metals and Material Society, U. S. A.
Members:
National Academy of Sciences, National Academy of Engineering

MAJOR WORKS

1969
A Low Threshold Room - Temperature Injection Laser. IEEEJ. Quantum Electron, QE-5(4). (with I. Hayashi and P. W. Foy)
1970
Double Heterostructure Injection Lasers with Room-Temperature Thresholds as lowas 2300 A/cm² .Appl. Phys. Lett. 16(8). (with I. Hayashi and S. Sumski)
1970
Junction Lasers Which Operate Continuouslyat Room-Temperature. Appl. Phys. Lett.17( 3). (with I. Hayashi and others)
1971
Ga As-Al Ga As Double Heterostructure Injection Lasers. J. Appl .Phys .42(5). (with I. Hayashi and F. K. Reinhart)