Electronics

Zhores Ivanovich Alferov

Russia / March 15, 1930
Physicist; Director, The Ioffe Institute of Physics and Technology; Vice President, The Russian Academy of Sciences

"Success in continuous operation of semiconductor lasers at room temperature - a pioneering step in optoelectronics"
Dr. Alferov, Dr. Hayashi and Dr. Panish have made pioneering contributions to the development of optoelectronics as we know it today with the achievement of continuous wave operation of semiconductor lasers at room temperature. They have thus paved the way for commercial use of electronic devices that play an essential role in the building of information infrastructures supporting the worldwide IT revolution.

BRIEF BIOGRAPHY

1930	Born in Belorussia, USSR
1952	Graduated, The Ulyanov-Lenin Electrotechnical Institute in Leningrad
1953	Engineer, The Ioffe Institute of Physics and Technology
1964-1967	Section Head, the same institute
1967	Laboratory Head, the same institute
1970	Doctor, Physics and Mathematics
1989-present	Presidium Chairman, The Leningrad (now St. Petersburg) Research Center, The Russian Academy of Sciences. Director, The Ioffe Institute of Physics and Technology

AWARDS AND HONORS

1971	Ballantyne Medal, The Franklin Institute, U. S. A.
1972	Lenin Prize
1978	Hewlett-Packard Europhysics Prize
1984	USSR State Prize
1996	Ioffe Prize, Russian Academy of Sciences
2000	Nobel Prize for Physics
	Vice President, The Russian Academy of Sciences Foreign Members, The German Academy of Sciences, The National Academy of Sciences (U. S. A.) Honorary Professor, Havana University

MAJOR WORKS

1969	Coherent radiation of Epitaxial Heterojunction Structures in the AlAs-GaAs System. Soviet Phys. Semiconductors 2 (10). (with V. M. Andreev and others)
1970	AlAs-GaAs Heterojunction Injection Lasers with a Low Room Temperature Threshold. Soviet Physics-Semiconductors 3 (9). (with V. M. Andreev and others)
1971	Investigation of the influence of the AlAs-GaAs Heterostructure Parameters on the Laser Threshold Current and the Realization of Continuous Emission at Room Temperature. Soviet Physics-Semiconductors 4 (9). (with V. M. Andreev and others)

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