Kyota Mikami Kyota Mikami

Assistant Professor, Graduate School of Engineering, Kyoto University *Profile is at the time of the award.

2026HagukumuScience & Engineering(hagukumu)

researchmap

Research topics: Physics-based modeling of SiC p-channel MOSFETs towards high-temperature electronics

Keyword

Summary: Mainstream Si CMOS technology cannot operate inherently in high-temperature (> 300℃) environments, such as furnace control, drilling of underground resources, and Venus exploration, due to the material properties of Si semiconductors. This research aims to construct a physics-based model of SiC p-channel MOSFETs towards CMOS integrated circuits using silicon carbide (SiC) semiconductors, which show great promise for high-temperature operation. This research will extend the essential electronics of modern society into the ultra-high temperature range, contributing to both academia and industry.

Message

Integrated circuits are found in virtually every electrical and electronic device around us, and it is no exaggeration to say modern society could not function without them. However, their operating temperature has limits, and integrated circuits capable of functioning in environments exceeding 300°C have not yet been put into practical use. I expect that the practical application of high-temperature integrated circuits will further enrich our lives. I am steadily advancing our research step by step, aiming for the practical application of CMOS using SiC, and contributing to the creation of next-generation electronics.