Takuya Maeda

Senior Assistant Professor, Graduate School of Engineering, The University of Tokyo*Profile is at the time of the award.

2024Inamori Research GrantsScience & Engineering

Research topics
Study on Nitride Semiconductor High Electron Mobility Transistor Using Novel Heterostructure
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) exhibit excellent characteristics such as high breakdown voltage, low on-resistance, and high-frequency operation, making them promising for research and development in power devices and high-frequency amplification devices. To further advance towards practical applications, the introduction of novel electronic materials is crucial for achieving dramatic performance improvements and the emergence of new functionalities. Scandium Aluminum Nitride (ScAlN) possesses attractive properties such as strong polarization, ferroelectricity, and high dielectric constant. Moreover, it can be integrated into GaN-based devices through epitaxial growth. This study focuses on elucidating the properties based on the high-quality enhancement of ScAlN/GaN heterostructures and demonstrates the prototyping of electronic devices.


I would like to express my sincere gratitude for being selected for the 2024 Inamori Research Grant. I extend my heartfelt thanks to the esteemed reviewers and everyone at the Inamori Foundation for their evaluation. I will strive to conduct meaningful research and make the most of this opportunity. Thank you very much.

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