Deura, Momoko

Graduate School of Engineering, The University of TokyoAssistant Professor*Profile is at the time of the award.

2018Inamori Research GrantsScience & Engineering

Research topics
New growth technology of high quality III-nitride semiconductors on silicon substrates by forming nano-scale voids
Group-III nitride semiconductors, which was awarded the Nobel Prize in Physics in 2014, has been expected for application to various optical and electronic devices. Although high quality crystals are essential for high performance devices, fabrication technology of nitride substrates is immature. Therefore, heterogeneous substrates have been used so far and it is difficult to obtain high quality crystals.

We have focused silicon substrates, which are high quality, low cost, large area, and established processes. Because it is inevitable to insert a buffer layer for the heteroepitaxy of nitride semiconductors, we have proposed the utilization of silicon carbide thin film easily formed by heating substrates with a supply of carbon source gas. Voids are formed during this process at the interface between the thin film and the substrate. Therefore, we aim to establish a technology of the heteroepitaxial growth of high-quality nitride crystals positively utilizing the voids.

Message from recipient

I would like to offer my sincere thanks for the selection of my proposed research for the Inamori Research Grants. I am hoping to take this opportunity to accelerate my research and to collaborate with other researchers.

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