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  3. Haruki Uchiyama

Haruki Uchiyama

Assistant Professor, Graduate School of Engineering, Nagoya University*Profile is at the time of the award.

2025Inamori Research GrantsScience & Engineering

Research topics
Interfacial engineering of low-dimensional materials/insulator by underpotential deposition
Keyword
Summary
Enhancing the performance of next-generation semiconductor devices requires innovations in channel materials and device structures. In Beyond 2 nm semiconductor technology, low-dimensional materials are promising due to their ability to maintain high carrier mobility while minimizing surface scattering. However, their clean surfaces present challenges at the semiconductor/gate insulator interface, which significantly impacts device performance. This study proposes a method for forming a monolayer metal buffer via underpotential deposition to achieve a clean and stable interface between low-dimensional materials and insulators.

Comment

I am honored to receive this research grant for exploring interface control technology between low-dimensional materials and gate insulators to enhance the performance of next-generation semiconductor devices. By tackling interface challenges that have been difficult to overcome with conventional technologies through an innovative approach, I am committed to contributing to the progress of semiconductor technology.

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